SCT2120AF

SCT2120AF N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 120m 29A 165W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Outline TO220AB Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packing Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C Marking SCT2120AF Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25C Tc = 100C Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Value 650 29 20 72 6 to 22 10 to 26 165 175 55 to 175 Unit V A A A V V W C C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/12 2017.07 - Rev.E SCT2120AF Thermal resistance Parameter Thermal resistance, junction - case Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC Tsold Values Min. Typ. Max. Unit - 0.70 0.91 C/W - - 265 C Electrical characteristics (Ta = 25C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain...