SCS215AJ
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
LP...
SCS215AJ
SiC
Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
LPT(L)
(1)
(2)
(3) (4)
lInner circuit
(1)
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2) N / C (3) Cathode (4) Anode
(2) (3) (4)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM
1 2 3
Embossed tape
Reel size (mm) Tape width (mm)
330 24 1,000 TLL SCS215AJ
Unit V V A A A A A W °C °C
200* 43*
4
Repetitive peak forward current Total power dissipation Junction temperature Range of storage temperature
IFRM PD Tj Tstg
56*5 100* 175 -55 to +175
6
*1 Tc=120°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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1/5
2014.01 - Rev.A
SCS215AJ
lElectrical characteristics (Tj = 25°C) Values Parameter DC blocking voltage Symbol VDC Conditions Min. IR =0.3mA IF=15A,Tj=25°C Forward voltage VF IF=15A,Tj=150°C IF=15A,Tj=175°C VR=600V,Tj=25°C Reverse current IR VR=600V,Tj=150°C VR=600V,Tj=175°C VR=1V,f=1MHz Total capacitance Total capacitive...
