SMK1360CI

SMK1360CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BVDSS=600V(Min.) Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) G Package Code TO-3P G DS TO-3P PIN Connection D Ordering Information Type No. SMK1360CI Marking SMK1360 S Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK1360 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 13 8.2 52 200 13 544 13 11.6 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 0.625 40 Unit °C/W KSD-T0V001-001 1 Free Datasheet http://www.Datasheet4U.com SMK1360CI Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward tra...