IR2109PBF

Data Sheet No. PD60191 revD IR21091(S) & (PbF) HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset. Internal 500ns dead-time, and programmable up to 5us with one external RDT resistor Lower di/dt gate driver for better noise immunity The dual function DT/SD pin input turns off both channels. Available in Lead-Free Product Summary VOFFSET 600V max. IO+/VOUT ton/off (typ.) 120 mA / 250 mA 10 - 20V 680 & 170 ns Dead time 500 ns (programmable up to 5uS) Packages Description The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC 8 Lead PDIP 8 Lead SOIC and latch immune CMOS technologies enable rugge- dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross- conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Conne...