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FQP20N06 Dataheets PDF



Part Number FQP20N06
Manufacturers Freescale
Logo Freescale
Description N-Channel 60-V (D-S) MOSFET
Datasheet FQP20N06 DatasheetFQP20N06 Datasheet (PDF)

Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 save.

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology FQ P20N06/ MCP20N06 PRO DUCT SUM M A RY V ) rDS(on) m (Ω) DS (V 26.5 @ V G S = 10V 60 32.5 @ V G S = 4.5V ID (A ) 87 a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Lim it Units Param eter VDS 60 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TC=25 C ID o 87 240 90 300 IDM IS TC=25 C PD A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C T H E RMA L RE SIST A NC E RA T ING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim um U nits 62.5 0.5 o o RθJA RθJC C/W C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 http://www.Datasheet4U.com Freescale FQ P20N06/ MCP20N06 SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A A Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Test Conditions VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Min 1 Limits Unit Typ Max V nA uA A 26.5 32.5 30 1.1 8.5 3.3 4.0 18 59 37 9 mΩ S V ±100 o VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55 C 1 25 120 Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 30 A IS = 34 A, VGS = 0 V VDS = 15 V, VGS = 4.5 V, ID = 90 A VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary .


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