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Freescale N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology
FQ P20N06/ MCP20N06
PRO DUCT SUM M A RY V ) rDS(on) m (Ω) DS (V 26.5 @ V G S = 10V 60 32.5 @ V G S = 4.5V
ID (A ) 87
a
D1 G1 S1 N-Channel MOSFET
ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Lim it Units Param eter VDS 60 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
a b a o a o TC=25 C ID
o
87 240 90 300
IDM IS TC=25 C PD
A A W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 175
C
T H E RMA L RE SIST A NC E RA T ING S Param eter Sym bol
M axim umJunction-to-Am bient M axim umJunction-to-Case
a
Maxim um U nits
62.5 0.5
o o
RθJA RθJC
C/W C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature
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1
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Freescale
FQ P20N06/ MCP20N06
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A A
Symbol
VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf
Test Conditions
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
Min
1
Limits Unit Typ Max
V nA uA A 26.5 32.5 30 1.1 8.5 3.3 4.0 18 59 37 9 mΩ S V
±100
o
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55 C
1 25 120
Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage
A
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 30 A IS = 34 A, VGS = 0 V VDS = 15 V, VGS = 4.5 V, ID = 90 A VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time nC
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
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