SMK630F

SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.) G Package Code TO-220F-3L GD S TO-220F-3L PIN Connection D Ordering Information Type No. SMK630F Marking SMK630 S Marking Diagram AUK AUK GYMDD ΔYMDD SMK630 SDB20D45 Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * 4953990 5 9 1 021 9 0 5 9 4 5 k 021 h . o z o y . w w w Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Symbol VDSS VGSS Rating 200 ±30 9 5.4 36 30 9 232 9 9.5 150 Unit V V A A A W A mJ A mJ °C ID (Tc=25℃) (Tc=100℃) PD Drain current (Pulsed) Power dissipation * IDM ② ② ① ① IAS EAS IAR EAR TJ Tstg Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range -55~150 * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.16 62.5 Unit °C/W KSD-T0O043-001 1 http://www.Datasheet4U.com SMK630F Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold vol...