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FDP20N50 500V N-Channel MOSFET
May 2006
FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(...
www.DataSheet4U.com
FDP20N50 500V N-Channel MOSFET
May 2006
FDP20N50
500V N-Channel MOSFET
Features
20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V Low gate charge ( typical 45.6 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FDP Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP20N50
500 20 12.9 80 ± 30 1110 20 25.0 4.5 250 2.0 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
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