FDP5N50F

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET December 2007 FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed 4.5 2.7 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 300 -55 to +150 18 233 4.5 8.5 4.5 28 0.22 -Continuous (TC = 100oC) FDP5N50F FDPF5N50FT 500 ±30 4.5* 2.7* 18* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Max...