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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV75/12 VHF power transistor
Product specification August 1986
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Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 75 PINNING PIN 1
handbook, halfpage
BLV75/12
Gp dB > 6,5
ηC % > 55
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. vCBOM VCEO VEBO max. max. max.
BLV75/12
36 V 16,5 V 4 V 15 A 45 A 150 W 200 °C
−65 to + 150 °C
102 handbook, halfpage
MGP390
MGP391
handbook, halfpage
200
IC (A)
Ptot (W) ΙΙ 100
10 Th = 70 °C
Tmb = 25 °C
Ι
1 1 10
16.5
0 VCE (V) 102 0 100 Th (°C) 200
I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. soar. Rth mb-h = 0,2 K/W.
Fig.3
Power/temperature derating curves; Rth mb-h = 0,2 K/W.
THERMAL RESISTANCE Dissipation = 96 W; Tmb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth j−mb Rth mb−h = = 1,05 K/W 0,2 K/W
August 1986
3
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain VCE = 10 V; IC = 10 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance Cre Ccf typ. typ. Cc typ. hFE min. typ. ESBR min. ICES max. V(BR)EBO min. V(BR)CEO min. V(BR)CBO min.
BLV75/12
36 V 16,5 V 4 V 44 mA 20 mJ 15 55
240 pF 150 pF 3 pF
MGP392
handbook, halfpage
80
handbook, halfpage
800
MGP393
VCE = 12.5 V hFE 10 V
Cc (pF)
40
400
0 0 10 20 30 IC (A) 40
0 0 10 VCB (V) 20
Fig.4
D.C. current gain versus collector current; Tj = 25 °C.
Fig.5
Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 °C.
August 1986
4
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 75 Gp dB > 6,5 typ. 7,5
BLV75/12
ηC % > 55 typ. 63
handbook, full pagewidth
C2 C20 50 Ω C1 L1 L2
C4 L3
C6 L4 T.U.T. L7
C8 C10 L8
C13 C15 L11
C17
C18 50 Ω
C3
C5
C7 L5
C9 L9
C11
C16
C19
R1
L6
R2 C12 C14 +VCC
MGP394
L10
Fig.6 Class-B test circuit at f = 175 MHz.
August 1986
5
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
VHF power transistor
List of components: C1 C2 C3 C4 C6 C8 C11 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) = 10 pF multilayer ceramic chip capacitor(1) = C16 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) = C5 = 75 pF multilayer ceramic chip capacitor = C7 = 100 pF multilayer ceramic chip capacitor(1) = C9 = 2 × 75 pF multilayer ceramic chip capacitors(1) in parallel = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
BLV75/12
C10 = C13 = 39 pF multilayer ceramic chip capacitor(1) C12 = 2 × 820 pF multilayer ceramic chip capacitors in parallel(1) C14 = 100 nF polyester capacitor C15 = C17 = 12 pF multilayer ceramic chip capacitor(1) C18 = C19 = 470 pF multilayer ceramic chip capacitor(1) C20 = 820 pF multilayer ceramic chip capacitor(1) L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 10 mm; lead.