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BLV75-12 Dataheets PDF



Part Number BLV75-12
Manufacturers Philips
Logo Philips
Description VHF power transistor
Datasheet BLV75-12 DatasheetBLV75-12 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • inte.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 75 PINNING PIN 1 handbook, halfpage BLV75/12 Gp dB > 6,5 ηC % > 55 DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outlinbe, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. vCBOM VCEO VEBO max. max. max. BLV75/12 36 V 16,5 V 4 V 15 A 45 A 150 W 200 °C −65 to + 150 °C 102 handbook, halfpage MGP390 MGP391 handbook, halfpage 200 IC (A) Ptot (W) ΙΙ 100 10 Th = 70 °C Tmb = 25 °C Ι 1 1 10 16.5 0 VCE (V) 102 0 100 Th (°C) 200 I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz). Fig.2 D.C. soar. Rth mb-h = 0,2 K/W. Fig.3 Power/temperature derating curves; Rth mb-h = 0,2 K/W. THERMAL RESISTANCE Dissipation = 96 W; Tmb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth j−mb Rth mb−h = = 1,05 K/W 0,2 K/W August 1986 3 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor CHARACTERISTICS Tj = 25°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain VCE = 10 V; IC = 10 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance Cre Ccf typ. typ. Cc typ. hFE min. typ. ESBR min. ICES max. V(BR)EBO min. V(BR)CEO min. V(BR)CBO min. BLV75/12 36 V 16,5 V 4 V 44 mA 20 mJ 15 55 240 pF 150 pF 3 pF MGP392 handbook, halfpage 80 handbook, halfpage 800 MGP393 VCE = 12.5 V hFE 10 V Cc (pF) 40 400 0 0 10 20 30 IC (A) 40 0 0 10 VCB (V) 20 Fig.4 D.C. current gain versus collector current; Tj = 25 °C. Fig.5 Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 °C. August 1986 4 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor APPLICATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 75 Gp dB > 6,5 typ. 7,5 BLV75/12 ηC % > 55 typ. 63 handbook, full pagewidth C2 C20 50 Ω C1 L1 L2 C4 L3 C6 L4 T.U.T. L7 C8 C10 L8 C13 C15 L11 C17 C18 50 Ω C3 C5 C7 L5 C9 L9 C11 C16 C19 R1 L6 R2 C12 C14 +VCC MGP394 L10 Fig.6 Class-B test circuit at f = 175 MHz. August 1986 5 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor List of components: C1 C2 C3 C4 C6 C8 C11 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) = 10 pF multilayer ceramic chip capacitor(1) = C16 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) = C5 = 75 pF multilayer ceramic chip capacitor = C7 = 100 pF multilayer ceramic chip capacitor(1) = C9 = 2 × 75 pF multilayer ceramic chip capacitors(1) in parallel = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) BLV75/12 C10 = C13 = 39 pF multilayer ceramic chip capacitor(1) C12 = 2 × 820 pF multilayer ceramic chip capacitors in parallel(1) C14 = 100 nF polyester capacitor C15 = C17 = 12 pF multilayer ceramic chip capacitor(1) C18 = C19 = 470 pF multilayer ceramic chip capacitor(1) C20 = 820 pF multilayer ceramic chip capacitor(1) L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 10 mm; lead.


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