BLU30

DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: multi-base structure and emitter-ballasting resistors for an optimum temperature profile gold metallization ensures excellent reliability internal matching to achieve an optimum wideband capability and high power gain BLU30/12 The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature PIN CONFIGURATION PINNING PIN 1 handbook, halfpage SOT-119 class-B; c.w. VCE f PL GP ηC Th > > 12,5 V 470 MHz 30 W 6,0 dB 55 % 25 °C DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. January 1985 2 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (op...