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FDP8N60ZU Dataheets PDF



Part Number FDP8N60ZU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP8N60ZU DatasheetFDP8N60ZU Datasheet (PDF)

FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features • RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 10pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced tec.

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FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features • RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 10pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series o GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 135 1.05 -55 to +150 300 6.5 3.9 26 420 6.5 13.5 20 34.5 0.28 FDP8N60ZU FDPF8N60ZUT 600 ±30 6.5* 3.9* 26* Units V V A A mJ A mJ V/ns W W/oC o o Single Pulsed Avalanche Energy Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP8N60ZU 0.95 0.5 62.5 FDPF8N60ZUT 3.6 62.5 o Units C/W ©2009 Fairchild Semiconductor Corporation FDP8N60ZU / FDPF8N60ZUT Rev. A 1 www.fairchildsemi.com Free Datasheet http://www.Datasheet4U.com FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP8N60ZU FDPF8N60ZUT Device FDP8N60ZU FDPF8N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = ±30V, VDS = 0V 600 0.7 25 250 ±10 V V/oC μA μA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 3.25A VDS = 40V, ID = 3.25A 3.0 1.15 7 5.0 1.35 V Ω S Dynamic Characteristics Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 480V, ID = 6.5A VGS = 10V (Note 4) VDS = 25V, VGS = 0V f = 1MHz - 950 110 10 20 5 8 1265 150 15 26 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 6.5A RG = 25Ω, VGS = 10V (Note 4) - 20 30 55 35 50 70 120 80 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 6.5A VGS = 0V, ISD = 6.5A dIF/dt = 100A/μs 40 42 6.5 26 1.6 A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 20mH, IAS = 6.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 6.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics FDP8N60ZU / FDPF8N60ZUT Rev. A 2 www.fairchildsemi.com Free Datasheet http://www.Datasheet4U.com FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 10 ID,Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] *Notes: 1. VDS = 20V 2. 250μs Pulse Test 150 C o 1 1 25 C o *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 0.1 0.1 1 VDS,Drain-Source Voltage[V] 10 20 0.1 2 4 6 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 100 RDS(ON) [mΩ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 1.4 150 C o 1.3 VGS = 10V 25 C o 1.2 VGS = 20V 10 1.1 *Note: TC = 25 C o *Notes: 1. VGS = 0V 2. 250μs Pulse Test 1.0 0 3 1 12 6 ID.


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