N-Channel MOSFET
FDP61N20 — N-Channel UniFETTM MOSFET
FDP61N20
N-Channel UniFETTM MOSFET
200 V, 61 A, 41 mΩ
Features
• RDS(on) = 34 mΩ (...
Description
FDP61N20 — N-Channel UniFETTM MOSFET
FDP61N20
N-Channel UniFETTM MOSFET
200 V, 61 A, 41 mΩ
Features
RDS(on) = 34 mΩ (Typ.) @ VGS = 10 V, ID = 30.5 A Low Gate Charge (Typ. 58 nC) Low Crss (Typ. 80 pF) 100% Avalanche Tested
Applications
PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-220
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation
(TC = 25°C) - Derate Above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junct...
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