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FCH35N60
N-Channel MOSFET
Description
FCH35N60 N-Channel MOSFET March 2013 FCH35N60 N-Channel SuperFET® MOSFET 600 V, 35 A, 98 mΩ Features 650 V @ TJ = 150°C Typ.RDS(on) = 79 mΩ Ultra Low Gate Charge ( Typ. Qg = 139 nC ) Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high ...
Fairchild Semiconductor
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FCH35N60
N-Channel MOSFET
- Fairchild Semiconductor
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