FCH041N60F

FCH041N60F — N-Channel SuperFET® II FRFET® MOSFET FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ December 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 36 mΩ Ultra Low Gate Charge (Typ. Qg = 277 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) 100% Avalanche Tested RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G D S TO-247 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (f > 1 Hz) (Note 1) Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt Peak Diode Recovery dv/dt Pow...