FCD9N60NTM

FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A Ultra Low Gate Charge (Typ.Qg = 17.8nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S D G D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) (Note 3) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) -Continuous (TC = 25oC) FCD9N60N 600 ±30 9.0 5.7 27 135 9.0 9.3 100 15 92.6 0.74 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Single Pulsed Avalanche Energy Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for...