Document
STB141NF55 - STB141NF55-1 STP141NF55
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
Features
Type STB141NF55 STB141NF55-1 STP141NF55 VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A
3 1 2
1. Current limited by package
3 1
3 12
Description
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TO-220
D²PAK
I²PAK
Figure 1.
Internal schematic diagram
Applications
■ ■ ■
Motor control High current, switching application Automotive environment
Table 1.
Device summary
Order code STB141NF55 Marking B141NF55 B141NF55 P141NF55 Package D²PAK I²PAK TO-220 Packaging Tape & reel Tube Tube
STB141NF55-1 STP141NF55
August 2007
Rev 1
1/15
www.st.com
Free Datasheet http://www.Datasheet4U.com
Contents
STB141NF55 - STB141NF55-1 - STP141NF55
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
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STB141NF55 - STB141NF55-1 - STP141NF55
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 55 ±20 80 80 320 300 2 10 1.3 –55 to 175 Operating junction temperature Unit V V A A A W W/°C V/ns J °C
ID (1) IDM
(2)
PTOT dv/dt (3) EAS
(4)
Peak diode recovery voltage slope Single pulse avalance energy Storage temperature
Tstg Tj
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80A, di/dt < 300A/µs, VDD=80%V(BR)DSS 4. Starting Tj = 25°C, ID = 40A, VDD = 30V
Table 2.
Symbol Rthj-case Rthj-amb
Thermal data
Value Parameter TO-220 - I²PAK Thermal resistance junction-case max Thermal resistance junction-ambient max 62.5 -300 0.5
--
Unit D²PAK °C/W °C/W °C/W °C
Rthj-pcb (1) Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose (for 10 sec, 1.6mm from case)
35
1. When mounted on 1 inch², FR4 board, 2 oz Cu
3/15
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Electr.