2SC2216
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
0.05 A , 50 V N...
2SC2216
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
0.05 A , 50 V
NPN Plastic Encapsulated
Transistor
FEATURES Amplifier dissipation
NPN Silicon
TO-92
G H
Base Emitter Collector
D
J A B K
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
REF. A B C D E F G H J K
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Rating
50 45 4 50 300 125, -55~125
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob
Min.
50 45 4 40 300 -
Typ.
-
Max.
0.1 0.1 140 0.2 1.5 2
Unit
V V V μA μA V V MHz pF
Test Conditions
IC=100μA, IE=0 IC=10mA, IB=0 IE=100μA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCE=12.5V, IC=12.5mA VCB=10V, IE=0, f=30MHz
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