Document
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2SC2216
Features
• • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC
NPN Silicon Plastic-Encapsulate Transistor
TO-92
Pin Configuration Bottom View
E
B
C
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (V CB=50Vdc, IE =0) Emitter Cutoff Current (V EB =4.0Vdc, IC=0) DC Current Gain (I C=12.5mAdc, V CE=12.5Vdc) Collector-Emitter Saturation Voltage (I C=15mAdc, IB =1.5mAdc) Base-Emitter Saturation Voltage (I C=15mAdc, IB =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f=100MHz) Min 45 50 4.0 ----Max ------0.1 0.1 Units Vdc Vdc Adc uAdc uAdc D
B
OFF CHARACTERISTICS
V (BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
C
ON CHARACTERISTICS
h FE V CE(sat) V(BE)sat fT 40 ----300 140 0.2 1.5 ----Vdc Vdc MHz G
DIMENSIONS INCHES MIN .170 .170 .550 .010 .130 .010 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44
DIM A B C D E G
MAX .190 .190 .590 .020 .160 .104
MAX 4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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