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BDY46
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
BDY46 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regul...
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