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JCS7N65B

Jilin Sino

N-CHANNEL MOSFET

R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 7.0 A 650 V...


Jilin Sino

JCS7N65B

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R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 16pF) z z z dv/dt z RoHS FEATURES z Low gate charge z Low Crss (typical 16pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product ORDER MESSAGE Order codes JCS7N65CB-O-C-N-B JCS7N65FB-O-F-N-B JCS7N65SB-O-F-N-B JCS7N65SB-O-F-N-A JCS7N65BB-O-F-N-B Halogen Free NO NO NO NO NO Device Weight 2.15 g(typ) 2.20 g(typ) 1.37 g(typ) 1.37 g(typ) 1.71 g(typ) Marking JCS7N65CB JCS7N65FB JCS7N65SB JCS7N65SB JCS7N65BB Package TO-220C TO-220MF TO-263 TO-263 TO-262 Packaging Tube Tube Tube Reel Tube :201211E 1/13 Free Datasheet http://www.Datasheet4U.com R JCS7N65B ABSOLUTE RATINGS (Tc=25℃) JCS7N65FB 650 7.0* 4.3* 30* ±30 Value JCS7N65CB/SB/BB 650 7.0 4.3 30 Unit V A A A V Parameter - Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM VGSS -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Energy(note 1) EAS 590 mJ IAR EAR 7.0 14.0 4.5 142 48 A mJ V/ns W ( 3) dv/dt Peak Diode Recovery dv/dt(note 3) PD TC=25℃ -Derate above 25℃ TJ,TSTG Power Dissipation 1.14 0.38 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for...




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