N-CHANNEL MOSFET
R
N N-CHANNEL MOSFET
JCS7N65B
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
7.0 A 650 V...
Description
R
N N-CHANNEL MOSFET
JCS7N65B
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
7.0 A 650 V 1.3 Ω 25 nC
APPLICATIONS
z High frequency switching
mode power supply z Electronic ballast z UPS
z z Crss ( 16pF) z z z dv/dt z RoHS
FEATURES z Low gate charge z Low Crss (typical 16pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
ORDER MESSAGE
Order codes JCS7N65CB-O-C-N-B JCS7N65FB-O-F-N-B JCS7N65SB-O-F-N-B JCS7N65SB-O-F-N-A JCS7N65BB-O-F-N-B Halogen Free NO NO NO NO NO Device Weight 2.15 g(typ) 2.20 g(typ) 1.37 g(typ) 1.37 g(typ) 1.71 g(typ)
Marking JCS7N65CB JCS7N65FB JCS7N65SB JCS7N65SB JCS7N65BB
Package TO-220C TO-220MF TO-263 TO-263 TO-262
Packaging Tube Tube Tube Reel Tube
:201211E
1/13
Free Datasheet http://www.Datasheet4U.com
R
JCS7N65B
ABSOLUTE RATINGS (Tc=25℃)
JCS7N65FB 650 7.0* 4.3* 30* ±30 Value JCS7N65CB/SB/BB 650 7.0 4.3 30 Unit V A A A V
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM VGSS
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Energy(note 1)
EAS
590
mJ
IAR EAR
7.0 14.0 4.5 142 48
A mJ V/ns W
( 3) dv/dt Peak Diode Recovery dv/dt(note 3) PD TC=25℃ -Derate above 25℃ TJ,TSTG
Power Dissipation
1.14
0.38
W/℃
Operating and Storage Temperature Range Maximum Lead Temperature for...
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