INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1516
DESCRIPTION ·Collector-Emi...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
PNP Power
Transistor
2SA1516
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907
www.DataSheet4U.com
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-1.2
A
PC
130
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.Datasheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1516
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-180
V
www.DataSheet4U.com VCE(sat)
Collector-Emitter Saturation Voltage
IC= -8A; IB= -0.8A
B
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -7A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -180V ; IE= 0
-5
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5
μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
180
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
35
COB
Output Capacit...
