SI2318CDS

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.042 at VGS = 10 V 0.051 at VGS = 4.5 V ID (A)a 5.6 5.1 Qg (Typ.) 2.9 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Load Switch Portable and Consumer Applications D (3) SOT-23 G 1 3 D Marking Code P9 XXX Lot Traceability and Date Code Part # Code G (1) (2) S N-Channel MOSFET S 2 Top View Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IDM IS Symbol VDS VGS Limit 40 ± 20 5.6a 4.5 4.3b, c 3.5b, c 20 1.75 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 260 A Unit V Continuous Drain Current (TJ = 150 °C) ID Maximum Power Dissipation PD W TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit °C/W Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under s...