SI7454CDP

New Product Si7454CDP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0305 at VGS = 10 V 0.033 at VGS = 7.5 V 0.043 at VGS = 4.5 V PowerPAK® SO-8 FEATURES ID (A) 22 21 18.5 9.5 nC a Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge dc-to-dc D Industrial G Bottom View Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 100 ± 20 22 17.6 8.1b, c 6.5b, c 40 22 3.7b, c 15 11.2 29.7 19 4.1b, c 2.6b, c - 55 to 150 260 W mJ A Unit V °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Based on TC = 25 °C. b. Surface mou...