C5101

2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5101 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.24typ tstg (µs) 4.32typ tf (µs) 0.40typ 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 0m m 00 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) 10 m A IB =4 30 00 2 150 mA A 8 Collector Current I C (A) 100m A 8 Collector Current I C (A) 75 m A 2 6 50 mA 6 4 20mA 1 Cas (Case 2 25˚C 2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0 ˚C ( 10mA 0 0 1 2 3 4 –30˚C...