NE02139

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications. 00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 10 V, IC = 5 mA 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 1.2 1.5 2.0 2.4 2.6 3.6 3.7 1.8 1.9 2.4 2.9 3.2 3.9 4.3 18.60 13.82 11.83 9.36 7.82 7.51 6.31 21.32 16.15 13.50 11.02 9.12 8.10 6.48 .36 .31 .50 .44 .52 .68 .71 .16 .33 .46 .53 .57 .62 .67 69 124 165 -175 -161 -141 -139 149 169 -179 -167 -154 -139 -134 .14 .12 .05 .06 .10 .14 .21 .15 .13 .09 .08 .14 .27 .42 39 (SOT 143 STYLE) NE02139 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 10 V, IC = 20 mA VCE =...