Ordering number:ENN3578
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1770/2SC4614
High-Voltage Switching Applicatio...
Ordering number:ENN3578
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1770/2SC4614
High-Voltage Switching Applications
Features
· Adoption of MBIT process. · High breakdown voltage and large current capacity.
Package Dimensions
unit:mm 2064A
[2SA1770/2SC4614]
2.5 1.45 6.9 1.0
4.5
1.0
0.6
1.0
0.9 1 2 3
0.5 0.45
( ) : 2SA1770
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.54
2.54
1 : Emitter 2 : Collector 3 : Base SANYO : NMP
Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 1 150 –55 to +150
4.0
1.0
Unit V V V A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT
Rank hFE R 100 to 200 S 140 to 280
Conditions VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA
T 200 to 400
Ratings min typ max (–)1 (–)1 100* 80 120 400*
Unit µA µA
MHz
* ; The 2SA1770/2SC4614 are classified by 100mA hFE as follows :
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, ...