IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
G E
E G G C
C
C
C
E
VCE(on) typ. = 1.55V @ 8A
n-channel
G
D2-Pak IRGS4615DPbF
TO-220AB IRGB4615DPbF
C
E
Applications Appliance Drives Inverters UPS
Features Low VCE(ON) and switching losses S...
