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SSR-75DA Dataheets PDF



Part Number SSR-75DA
Manufacturers Fotek
Logo Fotek
Description DC to AC Solid State Relay
Datasheet SSR-75DA DatasheetSSR-75DA Datasheet (PDF)

Technische Information / Technical Information IGBT-Module IGBT-Modules FF200R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Perio.

  SSR-75DA   SSR-75DA


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Technische Information / Technical Information IGBT-Module IGBT-Modules FF200R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms Tvj= 25° C TC = 70 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1200 200 275 400 V A A A TC=25°C, Transistor Ptot 1,4 kW VGES +/- 20V V IF 200 A IFRM 400 A VR = 0V, t p = 10ms, T Vj = 125°C I t 2 18 kA s 2 RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, V GE = 15V, Tvj = 25°C IC = 200A, V GE = 15V, Tvj = 125°C IC = 8mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,5 typ. 3,2 3,85 5,5 max. 3,7 6,5 V V V VGE = -15V...+15V QG - 2,1 - µC f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 13 - nF f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 0,85 - nF VCE = 1200V, V GE = 0V, Tvj = 25°C ICES - - 5 mA VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Martin Knecht approved by: SM TM; Wilhelm Rusche date of publication: 2003-01-11 revision: 3.0 1 (8) DB_FF200R12KS4_3.0 2003-01-11 Free Datasheet http://www.Datasheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FF200R12KS4 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip IC = 200A, V CE = 600V, V GE = ±15V RG = 4,7 Ω , Tvj = 125°C, Lσ = 60nH IC = 200A, V CE = 600V, V GE = ±15V RG = 4,7 Ω , Tvj = 125°C, Lσ = 60nH tP ≤ 10µs, V GE ≤ 15V, R G = 4,7 Ω Tvj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt Anschlüsse / terminals 2-3 ISC LσCE 1250 20 A nH Eoff 15 mJ Eon 19 mJ tf 0,06 0,07 µs µs td,off 0,53 0,59 µs µs tr 0,09 0,10 µs µs td,on 0,10 0,13 µs µs min. typ. max. pro Zweig / per arm, TC=25°C RCC‘+EE‘ - 0,7 - mΩ Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 200A, V GE = 0V, Tvj = 25°C IF = 200A, V GE = 0V, Tvj = 125°C IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Erec 8 19 mJ mJ Qr 15 40 µC µC IRM 140 220 A A VF min. - typ. 2,0 1,7 max. 2,4 V V 2 (8) DB_FF200R12KS4_3.0 2003-01-11 Free Datasheet http://www.Datasheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FF200R12KS4 Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor,DC , pro Modul / per module Transistor / transistor,DC , pro Zweig / per arm Diode / Diode, DC, pro Modul / per module Diode / Diode, DC, pro Zweig / per arm Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module pro Zweig / per arm λPaste = 1 W/m*K / λgrease = 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvj max 150 °C Rth.


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