Document
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FF200R12KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms Tvj= 25° C TC = 70 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1200 200 275 400 V A A A
TC=25°C, Transistor
Ptot
1,4
kW
VGES
+/- 20V
V
IF
200
A
IFRM
400
A
VR = 0V, t p = 10ms, T Vj = 125°C
I t
2
18
kA s
2
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, V GE = 15V, Tvj = 25°C IC = 200A, V GE = 15V, Tvj = 125°C IC = 8mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
4,5
typ.
3,2 3,85 5,5
max.
3,7 6,5 V V V
VGE = -15V...+15V
QG
-
2,1
-
µC
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
13
-
nF
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
-
0,85
-
nF
VCE = 1200V, V GE = 0V, Tvj = 25°C
ICES
-
-
5
mA
VCE = 0V, V GE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: MOD-D2; Martin Knecht approved by: SM TM; Wilhelm Rusche
date of publication: 2003-01-11 revision: 3.0
1 (8)
DB_FF200R12KS4_3.0 2003-01-11
Free Datasheet http://www.Datasheet4U.com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FF200R12KS4
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 Ω , Tvj = 25°C VGE = ±15V, R G = 4,7 Ω , Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip IC = 200A, V CE = 600V, V GE = ±15V RG = 4,7 Ω , Tvj = 125°C, Lσ = 60nH IC = 200A, V CE = 600V, V GE = ±15V RG = 4,7 Ω , Tvj = 125°C, Lσ = 60nH tP ≤ 10µs, V GE ≤ 15V, R G = 4,7 Ω Tvj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt Anschlüsse / terminals 2-3 ISC LσCE 1250 20 A nH Eoff 15 mJ Eon 19 mJ tf 0,06 0,07 µs µs td,off 0,53 0,59 µs µs tr 0,09 0,10 µs µs td,on 0,10 0,13 µs µs
min.
typ.
max.
pro Zweig / per arm, TC=25°C
RCC‘+EE‘
-
0,7
-
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 200A, V GE = 0V, Tvj = 25°C IF = 200A, V GE = 0V, Tvj = 125°C IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C Erec 8 19 mJ mJ Qr 15 40 µC µC IRM 140 220 A A VF
min.
-
typ.
2,0 1,7
max.
2,4 V V
2 (8)
DB_FF200R12KS4_3.0 2003-01-11
Free Datasheet http://www.Datasheet4U.com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FF200R12KS4
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor,DC , pro Modul / per module Transistor / transistor,DC , pro Zweig / per arm Diode / Diode, DC, pro Modul / per module Diode / Diode, DC, pro Zweig / per arm Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module pro Zweig / per arm λPaste = 1 W/m*K / λgrease = 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvj max 150 °C Rth.