ME15N10-G

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME15N10 (Pb-free) ME15N10-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Case * TC=25℃ TC=70℃ TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ RθJC Rating 100 ±20 14.7 13.6 59 34.7 22.2 -55 to 150 3.6 Unit V V A A W ℃ ℃/W * The device mounted on 1in2 FR4 board with 2 oz copper Dec,2009-Ver1.0 Free Datasheet http://www.Datasheet4U.com 01 N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G Limit VGS=0V, ID=2...