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ME15N10

N-Channel 100-V (D-S) MOSFET

Description

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This...

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