N-CHANNEL POWER MOSFET
SW7N90 PP0640SA - PP3500SC
N-CHANNEL POWER MOSFET
DESCRIPTION
This MOSFET is produced with advanced VDMOS technology of...
Description
SW7N90 PP0640SA - PP3500SC
N-CHANNEL POWER MOSFET
DESCRIPTION
This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.
G
D
S
SCHEMATIC SYMBOL
FEATURES
High ruggedness R DS(ON) (Max. 1.8 Ω)@V GS=10V Gate Charge (Typ.26nC) Improved dv/dt Capability 100% Avalanche Tested
GD
S
TO-220F PACKAGE
900 7.0 4.4 28 ±30 780 21 4.0 32 0.8
300
3.87 62.5
05081.R11 2/11 REV.1205B2
Page 11
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Free Datasheet http://www.Datasheet4U.com
SW7N90 PP0640SA - PP3500SC
V GS =0V,I D =250uA V DS =800V,V GS =0V V DS =640V,T C =125 C V DS =30V,V GS =0V V DS =-30V,V GS =0V
900 10 100
V DS =V GS ,I D =250uA V GS =10V,I D =1.5A
3.0
5.0 1.8
1440 V GS =0V,V DS =25V,f=1MHz 140 17 35 V DS =400V,I D =3.0A,R G =25ohm (note 4,5) 80 95 55 40 V DS =640V,V GS =10V,I D =3.0A (note 4,5) 8.5 20
1880 185 23 80 170 200 120 52
Integral reverse p-n Junction diode in the MOSFET I S =3.0A, V GS =0V I S =3.0A, V GS =0V dI F /d t =100A/us Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 67mH, I AS = 3.0A, V DD = 50V, R G =25Ω, Starting T J = 25 C 3. I SD≤ 3.0A, di/dt = 200A/us, V DD≤ BV DSS , Staring T J =...
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