SW7N90

SW7N90 PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. G D S SCHEMATIC SYMBOL FEATURES High ruggedness R DS(ON) (Max. 1.8 Ω)@V GS=10V Gate Charge (Typ.26nC) Improved dv/dt Capability 100% Avalanche Tested GD S TO-220F PACKAGE 900 7.0 4.4 28 ±30 780 21 4.0 32 0.8 300 3.87 62.5 05081.R11 2/11 REV.1205B2 Page 11 www.protekdevices.com www.semiwill.com Free Datasheet http://www.Datasheet4U.com SW7N90 PP0640SA - PP3500SC V GS =0V,I D =250uA V DS =800V,V GS =0V V DS =640V,T C =125 C V DS =30V,V GS =0V V DS =-30V,V GS =0V 900 10 100 V DS =V GS ,I D =250uA V GS =10V,I D =1.5A 3.0 5.0 1.8 1440 V GS =0V,V DS =25V,f=1MHz 140 17 35 V DS =400V,I D =3.0A,R G =25ohm (note 4,5) 80 95 55 40 V DS =640V,V GS =10V,I D =3.0A (note 4,5) 8.5 20 1880 185 23 80 170 200 120 52 Integral reverse p-n Junction diode in the MOSFET I S =3.0A, V GS =0V I S =3.0A, V GS =0V dI F /d t =100A/us Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 67mH, I AS = 3.0A, V DD = 50V, R G =25Ω, Starting T J = 25 C 3. I SD≤ 3.0A, di/dt = 200A/us, V DD≤ BV DSS , Staring T J =...