A1024

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: High Voltage Applications. A1024 —PNP silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -150 -150 -5 -50 1 150 V V V mA W ℃ 1 TO-92L 1. Emitter 2. Collector 3. Base ﹣55~150 ℃ ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -150 -150 -5 -0.9 -0.8 120 4.0 5.0 70 MIN. TYP. MAX. UNIT 240 -0.1 -0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= -5V，Ic= -10mA VCB= -150V，IE=0 VEB= -5V，Ic=0 Ic= -0.1mA，IE=0 Ic= -1mA，IB=0 IE= -0.1mA，Ic=0 VCE= -5V，Ic= -30mA Ic= -10mA，IB= -1mA Ic= -10mA，VCE= -30V VCB= -10V, IE=0, f = 1MHz Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage BVEBO VBE Collector-Emitter Saturation Voltage VCE(sat) Gain bandwidth product Common Base Output Capacitance fT Cob ■■hFE Classification Classification hFE O 70~140 Y 120~240 Free Datasheet http://www.Datasheet4U.com ...