SIHFZ48

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single D FEATURES 60 0.018 Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID ID...