N-Channel MOSFET
MDD6N60G N-channel MOSFET 600V
MDD6N60G
N-Channel MOSFET 600V, 4.5A, 1.45Ω
General Description
These N-channel MOSFET a...
Description
MDD6N60G N-channel MOSFET 600V
MDD6N60G
N-Channel MOSFET 600V, 4.5A, 1.45Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
à à à VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V
Applications
à à à Power Supply PFC High Current, High Speed Switching
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(1) (1) o
Symbol VDSS VGSS TC=25 C TC=100 C
o o
Rating 600 ±30 4.5 2.8 18 73 0.59 7.3 4.5 140 -55~150
Unit V V A A A W W/ C mJ V/ns mJ
o o
ID IDM
TC=25 C Derate above 25 C
(3) (4) o
PD EAR dv/dt EAS TJ, Tstg
Single Pulse Avalanche Energy
Junction and Storage Temperature Range * Id limited by maximum junction temperature
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
MDD6N60G 110 1.7
Unit
o
C/W
May. 2011 Ver. 1.5
1
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.Datasheet4U.com
MDD6N60G N-channel MOSFET 600V
Ordering Information
Part Number MDD6N60GRH Temp. Range -55~150 C
o
Package D-pak
Packing Reel
RoHS Status Halogen Free
El...
Similar Datasheet