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MDF7N60B Dataheets PDF



Part Number MDF7N60B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF7N60B DatasheetMDF7N60B Datasheet (PDF)

MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID = 7.0A  RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC.

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MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID = 7.0A  RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jan. 2021. Version 1.5 1 Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.0* 4.4* 28* 42 0.33 13.1 4.5 220 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC Rating 62.5 3.01 Unit oC/W Magnachip Semiconductor Ltd. MDF7N60B N-channel MOSFET 600V Ordering Information Part Number MDF7N60BTH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta = 25oC Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.5A Forward Transconductance gfs VDS = 30V, ID = 3.5A - Dynamic Characteristics Total Gate Charge Qg - Gate-Source Charge Qgs VDS = 480V, ID = 7.0A, VGS = 10V(3) - Gate-Drain Charge Qgd - Input Capacitance Ciss - Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - Output Capacitance Coss - Turn-On Delay Time td(on) - Rise Time Turn-Off Delay Time tr VGS = 10V, VDS = 300V, ID = 7.0A, - td(off) RG = 25Ω(3) - Fall Time tf - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - Source-Drain Diode Forward Voltage VSD IS = 7.0A, VGS = 0V - Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr IF = 7.0A, dl/dt = 100A/μs(3) Qrr - Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD≤7.0A, di/dt≤200A/us, VDD=50V, Rg=25Ω, Starting TJ=25°C. 4. L=8.2mH, IAS=7.0A, VDD=50V, Rg=25Ω, Starting TJ=25°C. Typ 1.0 7.5 20.1 4.5 7.9 800 5 90 17 27 64 33 7 345 3.2 Max Unit V 4.0 1 μA 100 nA 1.15 Ω - S - - nC - - - pF - - - ns - - - A 1.4 V - ns - μC Jan. 2021. Version 1.5 2 Magnachip Semiconductor Ltd. ID,Drain Current [A] MDF7N60B N-channel MOSFET 600V 14 12 Vgs=15.0V =10.0V =8.0V =7.0V 10 =6.5V =6.0V 8 =5.5V =5.0V 6 4 Notes 2 1. 250㎲ Pulse Test 2. TC=25℃ 0 0 5 10 15 20 25 V ,Drain-Source Voltage [V] DS Fig.1 On-Region Characteristics 3.0 ※ Notes : 2.5 1. VGS = 10 V 2. I = 3.5A D 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 200 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON) R [Ω ] 2.2 2.0 1.8 VGS=10.0V 1.6 VGS=20V 1.4 1.2 1.0 0 3 6 9 12 15 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 0 50 100 150 200 T , Junction Temperature [oC] J Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance IDR Reverse Drain Current [A] * Notes ; 1. Vds=30V 10 150℃ -55℃ 1 25℃ ※ Notes : 1. V = 0 V GS 10 2.250s Pulse test 150℃ 1 25℃ ID(A) 0.1 2 4 6 VGS [V] Fig.5 Transfer Characteristics Jan. 2021. Version 1.5 8 3 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V , Source-Drain Voltage [V] SD Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Magnachip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDF7N60B N-channel MOSFET 600V 10 ※ Note : ID = 7.0A 8 6 120V 300V 480V 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 102 Operation in This Area is Limited by R DS(on) 101 100 10 s 100 s 1 ms 10 ms 1s 100 ms DC 10-1 Single Pulse TJ=Max rated TC=25℃ 10-2 10-1 100 101 10.


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