Document
MDF7N60B N-channel MOSFET 600V
MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15Ω
General Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω
@ Tjmax @ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Jan. 2021. Version 1.5
1
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
Rating 600 660 ±30 7.0* 4.4* 28* 42 0.33 13.1 4.5 220
-55~150
Unit V
V
V A A A W W/ oC mJ V/ns mJ oC
Symbol RθJA RθJC
Rating 62.5 3.01
Unit oC/W
Magnachip Semiconductor Ltd.
MDF7N60B N-channel MOSFET 600V
Ordering Information
Part Number MDF7N60BTH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta = 25oC
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
Drain Cut-Off Current
IDSS
VDS = 600V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 3.5A
Forward Transconductance
gfs
VDS = 30V, ID = 3.5A
-
Dynamic Characteristics
Total Gate Charge
Qg
-
Gate-Source Charge
Qgs
VDS = 480V, ID = 7.0A, VGS = 10V(3)
-
Gate-Drain Charge
Qgd
-
Input Capacitance
Ciss
-
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
Output Capacitance
Coss
-
Turn-On Delay Time
td(on)
-
Rise Time Turn-Off Delay Time
tr
VGS = 10V, VDS = 300V, ID = 7.0A,
-
td(off)
RG = 25Ω(3)
-
Fall Time
tf
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source Diode Forward Current
IS
-
Source-Drain Diode Forward Voltage
VSD
IS = 7.0A, VGS = 0V
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr IF = 7.0A, dl/dt = 100A/μs(3)
Qrr
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD≤7.0A, di/dt≤200A/us, VDD=50V, Rg=25Ω, Starting TJ=25°C. 4. L=8.2mH, IAS=7.0A, VDD=50V, Rg=25Ω, Starting TJ=25°C.
Typ
1.0 7.5
20.1 4.5 7.9 800 5 90 17 27 64 33
7
345 3.2
Max Unit
V
4.0
1
μA
100
nA
1.15
Ω
-
S
-
-
nC
-
-
-
pF
-
-
-
ns -
-
-
A
1.4
V
-
ns
-
μC
Jan. 2021. Version 1.5
2
Magnachip Semiconductor Ltd.
ID,Drain Current [A]
MDF7N60B N-channel MOSFET 600V
14
12
Vgs=15.0V =10.0V
=8.0V
=7.0V
10
=6.5V
=6.0V
8
=5.5V =5.0V
6
4
Notes
2
1. 250㎲ Pulse Test
2. TC=25℃
0
0
5
10
15
20
25
V ,Drain-Source Voltage [V] DS
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V
2. I = 3.5A
D
2.0
1.5
1.0
0.5
0.0 -50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON) R [Ω ]
2.2
2.0
1.8 VGS=10.0V
1.6
VGS=20V
1.4
1.2
1.0
0
3
6
9
12
15
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250㎂
1.1
1.0
0.9
0.8 -50
0
50
100
150
200
T , Junction Temperature [oC] J
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
IDR Reverse Drain Current [A]
* Notes ; 1. Vds=30V
10
150℃
-55℃
1 25℃
※ Notes :
1. V = 0 V GS
10
2.250s Pulse test
150℃ 1
25℃
ID(A)
0.1
2
4
6
VGS [V]
Fig.5 Transfer Characteristics
Jan. 2021. Version 1.5
8
3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V] SD
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Magnachip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDF7N60B N-channel MOSFET 600V
10
※ Note : ID = 7.0A
8
6
120V 300V 480V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102 Operation in This Area is Limited by R
DS(on)
101
100
10 s
100 s 1 ms 10 ms 1s 100 ms
DC
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
100
101
10.