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TIM7785-8SL

Toshiba
Part Number TIM7785-8SL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Mar 30, 2014
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7G...
Datasheet PDF File TIM7785-8SL PDF File

TIM7785-8SL
TIM7785-8SL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.
5dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN G1dB= 6.
0dB at 7.
7GHz to 8.
5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.
5dBm Single Carrier Level.
MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 2.
2A f = 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 28.
5dBm, ∆f= 5MHz (Singl...


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