INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
DESCRIPTION ·Collector-Emi...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SD1912
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak Collector Power Dissipation @Ta=25℃
8
A
1.75 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1912
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
B
1.0
V
VBE(on) ICBO
Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
1.0
V μA μA
Collector Cutoff Current
VCB= 40V; IE= 0
100
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100
hFE-1
DC Current Gain
IC= 0....