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FDPF390N15A Dataheets PDF



Part Number FDPF390N15A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF390N15A DatasheetFDPF390N15A Datasheet (PDF)

FDPF390N15A — N-Channel PowerTrench® MOSFET December 2013 FDPF390N15A N-Channel PowerTrench® MOSFET 150 V, 15 A, 40 mΩ Features • RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored t.

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FDPF390N15A — N-Channel PowerTrench® MOSFET December 2013 FDPF390N15A N-Channel PowerTrench® MOSFET 150 V, 15 A, 40 mΩ Features • RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintain-ing superior switching performance. Applications • Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Motor Solar Inverter D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG Drain to Source Voltage Parameter Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds. FDPF390N15A 150 ±20 15 10 60 78 6.0 22 0.18 -55 to +175 300 Unit V V A A mJ V /ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. ©2011 Fairchild Semiconductor Corporation 1 FDPF390N15A Rev C1 FDPF390N15A 5.7 62.5 Unit oC/W www.fairchildsemi.com FDPF390N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDPF390N15A Top Mark FDPF390N15A Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min. Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 µA, VGS = 0 V 150 ID = 250 µA, Referenced to 25oC - VDS = 120 V, VGS = 0 V - VDS = 120 V, TC = 125oC - VGS = ±20 V, VDS = 0 V - On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 µA 2.0 RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15A - gFS Forward Transconductance VDS = 10 V, ID = 15 A - Dynamic Characteristics Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgs2 Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) VDS = 75 V, VGS = 0 V f = 1 MHz VDS = 75 V,VGS = 0 V VDS = 75 V,ID = 27 A VGS = 10 V f = 1 MHz - - - (Note 4) - - Switching Characteristics td(on).


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