Document
FDPF390N15A — N-Channel PowerTrench® MOSFET
December 2013
FDPF390N15A
N-Channel PowerTrench® MOSFET
150 V, 15 A, 40 mΩ Features
• RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A • Fast Switching Speed
• Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintain-ing superior switching performance.
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Motor Solar Inverter
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG
Drain to Source Voltage
Parameter
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
(Note 3)
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds.
FDPF390N15A 150 ±20 15 10 60 78 6.0 22 0.18
-55 to +175
300
Unit V V
A
A mJ V /ns W W/oC oC
oC
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
©2011 Fairchild Semiconductor Corporation
1
FDPF390N15A Rev C1
FDPF390N15A 5.7 62.5
Unit oC/W
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDPF390N15A
Top Mark FDPF390N15A
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS / ∆TJ
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 µA, VGS = 0 V
150
ID = 250 µA, Referenced to 25oC
-
VDS = 120 V, VGS = 0 V
-
VDS = 120 V, TC = 125oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 µA
2.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 15A
-
gFS
Forward Transconductance
VDS = 10 V, ID = 15 A
-
Dynamic Characteristics
Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgs2 Qgd ESR
Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S)
VDS = 75 V, VGS = 0 V f = 1 MHz
VDS = 75 V,VGS = 0 V
VDS = 75 V,ID = 27 A VGS = 10 V
f = 1 MHz
-
-
-
(Note 4)
-
-
Switching Characteristics
td(on).