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2SA2151 Audio Amplification Transistor
Features and Benefits
▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –200 V versions available ▪ Complementary to 2SC6011 ▪ Recommended output driver: 2SA1668
Description
By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit board design. This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ ▪ ▪ ▪ ▪ ▪ Single transistors for audio amplifiers Home audio amplifiers Professional audio amplifiers Automobile audio amplifiers Audio market Single transistors for general purpose
Package: 3 Lead TO-3P
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38100
Free Datasheet http://www.Datasheet4U.com
2SA2151
Audio Amplification Transistor
SELECTION GUIDE Part Number Type hFE Rating Range O: 50 to 100 2SA2151* PNP Range P: 70 tp 140 Range Y: 90 to 180 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. Bulk, 100 pieces Packing
ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating –200 –200 –6 –15 –4 160 150 –55 to150 Unit V V V A A W °C °C
ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Collector-Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Transfer Ratio* Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB = –200 V VEB = –6 V IC = –50 mA VCE = –4 V, IC = –3 A IC = –5 A, IB = –0.5 A VCE = –12 V, IE = 0.5 A VCB = –10 V, IE = 0 A, f = 1 MHz Test Conditions Min. – – –200 50 – – – Typ. – – – – – 20 450 Max. –10 –10 – 180 –0.5 – – Unit μA μA V – V MHz pF
*hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
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Free Datasheet http://www.Datasheet4U.com
2SA2151
Audio Amplification Transistor
Performance Characteristics
15
1A
700
mA
500
mA
3
300 m A A
200 m
IC vs. VCE
–IC (A)
100 mA
VCE(sat) vs. IB
5
50 mA –IB= 20 mA
–VCE(sat) (V)
10
2
1
–IC= 5 A
0 0 1 2 –VCE (V) 3 4 0 0 0.5
–IC= 10 A
–IB (A)
1.0
1.5
2.0
15
1000
–IC (A)
IC vs. VBE
–VCE = 4 V Continuous
°C 25°C
5
–30°C
–VCE = 4 V Continuous 10
hFE vs. IC
125
hFE
10
100
Typ.
0
0
0.5
–VBE (V)
1.0
1.5
2.0
1
0.01
0.1
1000
10.00
1 –IC (A)
10
100
125°C
hFE
–VCE = 4 V Continuous 10
hFE vs. IC
–30°C
RθJA vs. t
RθJA (°C/W)
100
25°C
1.00
0.10
1
0.01
0.1
1 –IC (A)
10
100
0.01
1
10
t (ms)
100
1000
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
3
Free Datasheet http://www.Datasheet4U.com
2SA2151
Audio Amplification Transistor
Performance Characteristics, continued
Safe Operating Area
TA= 25°C, single pulse, no heatsink, natural cooling 100.0
10 m s
10
10.0
DC
0m s
–IC (A)
1.0
0.1
0.01
1
10 –VCE (V)
100
1000
30
200
Typ.
150
fT (MHz)
20
W ith
In
PC (W)
fin
–VCE = 12 V Continuous
fT vs. IE
PC vs. TA
10
100
ite
He at sin k
50 Without Heatsink 0 25 50 75 100 TA (°C) 125 150
0
3.5
0.01 0.1 1 10 100
0
IE (A)
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
4
Free Datasheet http://www.Datasheet4U.com
2SA2151
Audio Amplification Transistor
PACKAGE OUTLINE DRAWING, TO-3P
15.6 ±0.3 6.0 ±0.2 14.0 ±0.3 1.8 ±0.3 13.6 ±0.2 9.6 ±0.3 2.0 ±0.2
5.0 MAX 5.0 ±0.2 2.1 MAX Ø3.2 ±0.1
3.5 NOM
XXXXXXXX XXXXXXXX
19.9 ±0.3
Branding
1.7
+0.2 –0.3
2 –0.1 (2×) 20.0 MIN 3 –0.1
+0.2 +0.2 –0.1
+0.2
0.6
1.0 –0.1 (3×)
+0.2
2×P5.45 ±0.1 Terminal dimension at lead tips
15.8 ±0.2
Pin Assignments: 1. Base 2. Collector 3. Emitter
1 2 3
Terminal core material: Cu Terminal treatment: Ni plating and solder dip Heat sink core material: Cu Heat sink treatment: Ni plating Leadform number: 100
Branding codes (exact appearance at manufacturer discretion): 1st line, type: A2151 2nd line, lot: YM H Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) H is the hFE rating (O, P, or Y; for values see footnote, Electrical Characteristics table)
Dimensions in millimeters
Lead.