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C5171 Dataheets PDF



Part Number C5171
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC5171
Datasheet C5171 DatasheetC5171 Datasheet (PDF)

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj T.

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2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180 180 5 2 1 2.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Free Datasheet http://www.Datasheet4U.com 2SC5171 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 180 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 1 A IC = 1 A, IB = 0.1 A VCE = 5 V, IC = 1 A VCE = 5 V, IC = 0.3 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 180 100 50 ― ― ― ― Typ. ― ― ― ― ― 0.16 0.68 200 16 Max 5.0 5.0 ― 320 ― 1.0 1.5 ― ― V V MHz pF Unit μA μA V Marking C5171 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 Free Datasheet http://www.Datasheet4U.com 2SC5171 IC – VCE 2.0 150 100 1.6 50 40 2.0 IC – VBE (A) Collector current IC Collector current IC 20 1.2 10 8 6 4 0.4 IB = 2 mA Common emitter Tc = 25°C 0 0 2 4 6 8 10 (A) 30 1.6 1.2 Tc = 100°C 25°C 0.8 0.8 −25°C 0.4 Common emitter VCE = 5 V 0 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 1 1000 hFE – IC Tc = 100°C 0.1 Tc = 25°C DC current gain hFE 300 Tc = 100°C 100 Tc = 25°C Tc = −25°C 30 Tc = −25°C 0.01 0.01 Common emitter IC/IB = 10 1 10 10 0.1 Common emitter VCE = 5 V 3 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) Safe Operating Area 5 IC max (pulsed)* 3 10 ms* IC max (continuous) 1 ms* 100 μs* (A) 1 0.5 0.3 100 ms* 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C VCEO max DC operation Tc = 25°C Collector current IC Curves must be derated linearly with increase in 0.01 temperature. 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) 3 2006-11-10 Free Datasheet http://www.Datasheet4U.com 2SC5171 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document sha.


ALC898 C5171 2SC5171


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