GB10NB37LZ

® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 10 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot E SD T s tg Tj June 1999 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature o o o Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175 Un it V V V A A A W W /o C KV o o C C 1/8 () Pulse width limited by safe operating area Free Datasheet http://www.0PDF.com STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal ...