UP0487CG

This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP0487CG Silicon N-channel MOSFET For switching circuits  Features  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package (Each transistor is separated)  SSMini type package, reduction of the mounting area and assembly cost  Package  Code SSMini6-F2  Pin Name 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) M Di ain sc te on na tin nc ue e/ d  Basic Part Number  2SK3937 × 2 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1)  Absolute Maximum Ratings Ta = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Symbol VDSS VGSS ID IDP PT Tch Total power dissipation Channel temperature Storage temperature Tstg Parameter on tin Symbol VDSS IDSS IGSS VTH ue  Electrical Characteristics Ta = 25°C±3°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n.  Marking Symbol: 2V  Internal Connection 6 5 Rating 20 ±12 100 200 125 125 Unit V V 4 mA mA mW °C °C 1 2 3 –55 to +125 Conditions Min 20 Typ Max 1.0 Unit V mA mA V W mS pF pF pF ns ns Drain-source cutoff current ce /D isc Drain-source surrender voltage ID = ...