L2N7002DW1T3G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 Pb−Free Package is Available. L2N7002DW1T1G/T3G MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Symbol VDSS VDGR ID ID IDM Value 60 60 ± 115 ± 75 ± 800 Unit Vdc Vdc mAdc 3 2 1 VGS VGSM ± 20 ± 40 Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW 4 5 6 3.0 RqJA TJ, Tstg 328 −55 to +150 mW/°C °C/W °C ORDERING INFORMATION Device L2N7002DW1T1G L2N7002DW1T3G Marking K2 K2 Shipping 3000 Tape & Reel 10000 Tape & Reel 1/4 Free Datasheet http://www.0PDF.com LESHAN RADIO COMPANY, LTD. L2N7002DW1T1G/T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 – – – – – – – – – – 1.0 500 100 –100 Vdc µAdc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltag...