STM6960

Green Product STM6960 Ver 1.2 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 5.5A R DS(ON) (m Ω) Max 55 @ VGS=10V 70 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 5.5 4.5 25 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Apr,27,2010 1 www.samhop.com.tw Free Datasheet http://www.Datasheet4U.com STM6960 Ver 1.2 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 VDS=VGS , ID=250uA VGS=10V , ID=4.5A VGS=4.5V , ID=3A VDS=5V , ID=4.5A 1 1.8 47 55 12 1100 75 55 18 14 40 8 18 ...