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TTK101MFV Dataheets PDF



Part Number TTK101MFV
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TTK101MFV DatasheetTTK101MFV Datasheet (PDF)

TTK101MFV For ECM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV Application for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.) @VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDO -20 V IG 10 mA PD (No.

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TTK101MFV For ECM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV Application for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.) @VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDO -20 V IG 10 mA PD (Note 1) 150 mW Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) 0.22±0.05 0.32±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 3 2 1.2±0.05 0.8±0.05 0.4 0.4 0.13±0.05 0.5±0.05 VESM 1.Drain 2.Source 3.Gate JEDEC - JEITA - TOSHIBA 2-1L1C Weight: 1.5mg (typ.) 0.5mm 0.45mm 0.45mm 0.4mm Marking I Type Name IDSS Classification Symbol 1: A-Rank 2: B-Rank IDSS Classification A-Rank 140 to 240 μA B-Rank 210 to 340 μA 1 Equivalent Circuit D G S Start of commercial production 2009-03 2014-03-01 Electrical Characteristics (Ta=25°C) TTK101MFV Characteristic Symbol Test Condition Min Typ. Max Unit Drain current IDSS VDS = 2 V, VGS = 0 A 140 ⎯ 240 µA B 210 ⎯ 350 Drain current ID VDD = 2 V, RL= 2.2kΩ,Cg = 5pF A 125 ⎯ 260 µA B 190 ⎯ 370 Gate-source cut-off voltage VGS(OFF) VDS = 2 V, ID = 1μA Forward transfer admittance |Yfs| VDS = 2 V, VGS = 0V -0.1 ⎯ -1.0 V 0.65 0.9 ⎯ mS Gate-drain breakdown voltage V(BR)GDO IG = -100 μA -20 ⎯ ⎯ V Input capacitance Voltage gain Ciss VDS = 2 V, VGS = 0, f = 1 MHz Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV ⎯ 1.8 ⎯ pF A -2.7 -1.3 ⎯ dB B -1.8 -0.6 ⎯ Delta voltage gain Delta voltage gain DGv(f) VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV ⎯ 0 -1.0 dB DGv(V) VDD = 2 V to 1.5 V, RL = 2.2 kΩ, Cg = 5pF,f = 1kHz, vin=100mV A ⎯ -0.7 -1.4 dB B ⎯ -1.4 -3.0 Noise voltage Total harmonic distortion VN VDD = 2 V, RL = 1 kΩ, Cg = 10 pF, Gv = 80 dB, A-Curve Filter ⎯ 15 30 mV A ⎯ 1.1 ⎯ THD VDD = 2 V, RL = 2.2kΩ, Cg = 5 pF, f = 1kHz, vin = 50mV % B ⎯ 0.6 ⎯ Time output stability tos VDD = 2 V, RL = 2.2 kΩ, Cg = 5 pF ⎯ 20 50 ms Time Output Stability Test Method a) TEST CIRCUIT b) TEST SIGNAL 5pF 2.2k Ω VDD = 2.0V Vout VDD 2V 0V Vout VDD-ID*RL 0V 50% 90% tos 2 2014-03-01 Drain Current I D ((uμAA)) ID - VGS 400 VDS=2V Common Source Ta= 2 5 ℃ 300.


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