FB17N50L

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 33 59 Single D FEATURES 500 0.28 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance Avalanche Voltage and Current Low Trr and Soft Diode Recovery Lead (Pb)-free Available and Available RoHS* COMPLIANT TO-220 APPLICATIONS G Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching S N-Channel MOSFET S G D ZVS and High Frequency Circuit PWM Inverters ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 30 16 11 64 1.8 390 16 22 220 13 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum ju...