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K4146 Dataheets PDF



Part Number K4146
Manufacturers Renesas
Logo Renesas
Description MOSFET
Datasheet K4146 DatasheetK4146 Datasheet (PDF)

Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free .

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Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 2 Repetitive Avalanche Energy ∗ Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 75 ±20 ±80 ±200 84 1.5 150 −55 to +150 33 109 Unit V V A A W W °C °C A mJ Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 1 of 6 Free Datasheet http://www.nDatasheet.com 2SK4146 Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Min Typ 2.0 15 3.0 32 7.8 3500 620 160 26 20 85 17 61 16 20 1.0 58 125 Max 10 ±100 4.0 10.1 Unit μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 75 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 38 V, ID = 40 A, VGS = 10 V, RG = 0 Ω VDD = 60 V, VGS = 10 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μ s 1.5 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 VDS VDS Wave Form 0 td(on) ton τ τ = 1 μs Duty Cycle ≤ 1% tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 2 of 6 Free Datasheet http://www.nDatasheet.com 2SK4146 Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C 1000 d it e Lim V ) n) (o 0 i S 1 RD S = G ID(DC) (V ID(pul s e) PW =1 i ID - Drain Current - A 100 00 1i 1i 0 m i μs m s i 10 s w Po D er is 1 TC = 25°C Single Pulse p si io at n d it e m Li 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 83.3 °C/W 10 Rth(ch-C) = 1.49 °C/W 1 0.1 0.001 1m Single Pulse 0.01 10 m 0.1 m 100 1 1 10 10 100 100 1000 1000 PW - Pulse Width - s R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 3 of 6 Free Datasheet http://www.nDatasheet.com 2SK4146 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Chapter Title FORWARD TRANSFER CHARACTERISTICS 250 200 ID - Drain Current - A ID - Drain Current - A 1000 100 10 1 0.1 0.01 0 TA = -55°C 25°C 75°C 150°C 150 100 50 0 0 1 2 3 4 V GS = 10 V Pulsed 5 6 V DS = 10 V Pulsed 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 V DS = 10 V ID = 1 mA Pulsed -75 -25 25 75 125 175 | yfs | - Forward Transfer Admittance - S 100 TA = -55°C 25°C 75°C 150°C 10 1 0.1 1 10 V DS = 10 V Pulsed 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 16 12 8 4 0 0 1 10 20 16 12 ID = 16 A 40 A 80 A 8 4 0 Pulsed 0 4.


2SK4146 K4146 F2HNK60Z


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