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C4D20120D Dataheets PDF



Part Number C4D20120D
Manufacturers Cree
Logo Cree
Description Silicon Carbide Schottky Diode
Datasheet C4D20120D DatasheetC4D20120D Datasheet (PDF)

C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runa.

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C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number C4D20120D Package TO-247-3 Marking C4D20120 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Maximum Ratings (TC=25°C unless otherwise specified) Symbol VRRM VRSM VDC IF IFRM Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current(Per Leg/Device) Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation(Per Leg/Device) Maximum Case Temperature Operating Junction Range Storage Temperature Range TO-247 Mounting Torque Value 1200 1300 1200 16/32 47* 31.5* 71* 59.5* 176/352 76/152 135 -55 to +175 -55 to +135 1 8.8 V V V A A A W ˚C ˚C ˚C Nm lbf-in M3 Screw 6-32 Screw Test Conditions Note TC<135˚C, No AC component TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C TC=110˚C .B D20120D Rev Datasheet: C4 IFSM Ptot Tc TJ Tstg * Per Leg, ** Per Device Subject to change without notice. www.cree.com/power 1 Free Datasheet http://www.nDatasheet.com Electrical Characteristics (Per Leg) Symbol VF IR QC Parameter Forward Voltage Reverse Current Total Capacitive Charge Typ. 1.5 2.2 35 65 66 754 45 38 Max. 1.8 3 200 400 Unit V μA nC Test Conditions IF = 10 A TJ=25°C IF = 10 A TJ=175°C VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C VR = 1200 V, IF = 10A di/dt = 200 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note C Total Capacitance pF Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC * Parameter Thermal Resistance from Junction to Case ** Typ. 0.85* 0.43** Max. Unit °C/W Test Conditions Note Per Leg, Per Device Typical Performance (Per Leg) 20 20 18 18 16 16 14 14 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 700 0.0007 600 0.0006 (A) IF Forward IF Current (A)Current IF Forward 12 10 8 6 4 2 0 12 10 8 6 4 2 0 0 0 0.5 0.5 1 1.5 2 2.5 1 1.5 2 2.5 VF Forward Voltage (V) 3 3 3.5 3.5 Current (μA) IR Reverse IR (μA) IR Reverse Current (A) 500 0.0005 400 0.0004 0.0003 300 200 0.0002 0.0001 100 00 0 0 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C VF (V) VF Forward Voltage VR Reverse Voltage (V) 500 500 1000 1000 1500 1500 2000 2000 VR Reverse Voltage VR (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D20120D Rev. B Free Datasheet http://www.nDatasheet.com Typical Performance (Per Leg) 80 200.0 180.0 160.0 70 60 140.0 IF(peak) (A) 50 120.0 PTot (W) 40 30 10% 30% 50% 70% DC Duty Duty Duty Duty 100.0 80.0 60.0 20 40.0 20.0 0.0 25 50 75 10 0 TC ˚C 100 125 150 175 25 50 75 100 125 150 175 TC ˚C Figure 4. Power Derating 800 Figure 3. Current Derating 70 60 700 50 600 500 40 Qrr (nC) 30 C (pF) 0 200 400 600 800 1000 400 300 20 200 10 100 0 0 0.1 1 10 100 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage VR (V) Figure 6. Capacitance vs. Reverse Voltage 3 C4D20120D Rev. B Free Datasheet http://www.nDatasheet.com Typical Performance (Per Leg) 1 Thermal Resistance (˚C/W) 0.1 0.01 0.001 0.0001 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 T (Sec) Figure 7. Transient Thermal Impedance Diode Model Diode Model CSD04060 VfT = VT+If*RT Vf T = VT + If*R T V = 0.98+(TJ* -1.71*10-3) VT= 0.965 +T(Tj * -1.3*10-3 ) -4 R = 0.040+(T -3 J* 5.32*10 ) RT= 0.096 +T(T * 1.06*10 ) j Note: Tj = Diode Junction Temperature In Degrees Celsius VT RT 4 C4D20120D Rev. B Free Datasheet http://www.nDatasheet.com Package Dimensions Package TO-247-3 POS A B X Z C D E Inches Min .605 .800 .780 .095 .046 .060 Max .635 .831 .800 .133 .052 .095 Millimeters Min 15.367 20.320 19.810 2.413 1.168 1.524 Max 16.130 21.10 20.320 3.380 1.321 2.410 W BB Y F G H J AA K L .215 TYP .175 .075 6˚ 4˚ 2˚ 2˚ .090 .020 9˚ 9˚ 2˚ 2˚ .137 .210 .502 .637 .038 .110 .030 .161 .205 .085 21˚ 6˚ 4˚ 4˚ .100 .030 11˚ 11˚ 8˚ 8˚ .144 .248 .557 .695 .052 .140 .046 .176 5.460 TYP 4.450 1.910 6˚ 4˚ 2˚ 2˚ 2.286 .508 9˚ 9˚ 2˚ 2˚ 3.487 5.334 12.751 16.180 0.964 2.794 0.766 4.100 5.210 2.160 21˚ 6˚ 4˚ 4˚ 2.540 .762 11˚ 11˚ 8˚ 8˚ 3.658 6.300 14.150 17.653 1.321 3.556 1.168 4.472 CC M N P Q R S T U V W X Y Z AA BB CC Recommended Solder Pad Layout Part Number C4D20120D TO-247-3 Package TO-247-3 Marking C4D20120 This product has not been designed or test.


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