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C4D10120A Dataheets PDF



Part Number C4D10120A
Manufacturers Cree
Logo Cree
Description Silicon Carbide Schottky Diode
Datasheet C4D10120A DatasheetC4D10120A Datasheet (PDF)

C4D10120A Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC Z-Rec™ Rectifier Features Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching TO-220-2 PIN 1 PIN 2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Wit.

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C4D10120A Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC Z-Rec™ Rectifier Features Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching TO-220-2 PIN 1 PIN 2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway CASE Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number C4D10120A Package TO-220-2 Marking C4D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol VRRM VRSM VR IF IFRM IFSM Ptot Tc TJ Tstg Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Peak Reverse Voltage Maximum DC Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Power Dissipation Maximum Case Temperature Operating Junction Range Storage Temperature Range TO-220 Mounting Torque Value 1200 1300 1200 29.5 14 10 Unit V V V A TC=25˚C TC=135˚C TC=152˚C Test Conditions Note 47 31.5 71 59.5 136 59 135 -55 to +175 -55 to +135 1 8.8 A A W ˚C ˚C ˚C Nm lbf-in TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C TC=110˚C M3 Screw 6-32 Screw 1 C4D10120A Rev. A Free Datasheet http://www.nDatasheet.com Electrical Characteristics Symbol VF IR QC Parameter Forward Voltage Reverse Current Total Capacitive Charge Typ. 1.5 2.2 30 55 52 754 45 38 Max. 1.8 3 250 350 Unit V μA nC Test Conditions IF = 10 A TJ=25°C IF = 10 A TJ=175°C VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note C Total Capacitance pF 1. Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. 1.1 Max. Unit °C/W Test Conditions Note Typical Performance 20 18 16 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 600.00 500.00 IF (A)Current IF Forward 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 IR (μA) IR Reverse Current (µA) 400.00 300.00 200.00 100.00 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0.00 0 500 1000 1500 2000 VF Forward Voltage VF (V) Figure 1. Forward Characteristics VR Reverse Voltage VR (V) Figure 2. Reverse Characteristics 2 C4D10120A Rev. A Free Datasheet http://www.nDatasheet.com Typical Performance C4D10120A Current Derating 100 70 90 160.0 140.0 120.0 100.0 60 80 F(peak) IF(PEAK) Peak Forward Current (A) 50 70 40 50 60 10% 20% 30% 50% 70% DC Duty Duty Duty Duty Duty (A) PTot (W) 80.0 60.0 40.0 20.0 0.0 I 30 40 30 20 20 10 10 0 0 25 25 50 50 75 75 Tc Case Temper.


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