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C2M1000170D

Cree

Silicon Carbide Power MOSFET


Description
VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Channel Enhancement Mode Feature s Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Ultra-low Drain-gate capacitance Halogen Free, RoH...



Cree

C2M1000170D

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